Mikroèlektronika

This work presents a correlator for constructing the second-order autocorrelation function g⁽²⁾(τ), implemented on a field-programmable gate array (FPGA). The device is designed for high-precision registration of time intervals between photons detected from single emitters. The use of an FPGA enabled a time resolution of 185 ps and real-time event processing. Experimental data demonstrating photon antibunching with g⁽²⁾(0) < 0.5, a characteristic feature of single quantum emitters, are presented. The device can be used for photon correlation analysis in quantum optics and in studies involving single quantum emitters.

The development of national resists for electron-beam and ion-beam lithography processes is reviewed. Positive resists based on polymethyl methacrylate allow to create nanoscale structures. Moreover, the possibility of using a combination of the created resists as bilayer resist is demonstrated. The perspectives of the development of national processes of electron-beam and ion-beam lithography are also demonstrated. At the present moment own national technological processes of electron-beam and ion-beam lithography are at the stage of demonstrators. In the near future, national electron-beam and ion-beam lithography devices will be developed. It will take significantly more time to organize production of national ion-beam lithography equipment.

The finite element method was used to simulate four designs of three-dimensional microinductors, the production of which is carried out by self-assembly using residual mechanical stress. During the simulation the deformation of blanks made of a 300 nm thick Cr film was calculated in the specified areas of which a gradient of mechanical stress was formed. The finite element method was also used to determine the inductance of the obtained microinductors.

A model, methodology and software tools for modeling a spiking neural network in the training mode taking into account the peculiarities of the functioning of memristive crossbar arrays have been developed. The influence of voltage drops on interconnections, discrete step of tuning of conductivity levels of memristive elements and nonlinearity of their volt-ampere characteristics on the efficiency of execution of spiking neural network training algorithms has been investigated. The results of testing the spiking neural network in the training mode and inference mode in the task of image recognition with the use of the developed modeling technique taking into account the characteristics of experimentally manufactured memristive structures have been obtained.

The results of the study of the influence of thermal annealing on the formation of ohmic contacts of aluminum-silicon and aluminum-polysilicon at the stage of manufacturing modern integrated circuits are presented. It has been established that standard thermal annealing at a temperature of 450 ^oC for 20 min in nitrogen leads both to the dissolution of silicon in aluminum contacts with the subsequent formation of recrystallized islands of p-type silicon at the aluminum-silicon interface, and to the dissolution of polysilicon, with its subsequent release in the form of acute-angled clumping. When using rapid thermal annealing (T_max = 450 ^oC, 7 s, N₂), the formation of such conglomerates was not detected. The dissolution of polysilicon (silicon) in aluminum during the formation of aluminum-polysilicon (aluminum-silicon) ohmic contacts leads to a change in the value of the contact resistance of polysilicon resistors and the volt-ampere characteristics of bipolar transistors.